Part No.  ：    MRF1518NT1  MRF1518

 Description  ：RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
520 MHz, 8 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET

Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.5 Volts
Output Power ó 8 Watts
Power Gain ó 11 dB
Efficiency ó 55%
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal
Impedance Parameters
• RF Power Plastic Surface Mount Package
• Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
• N Suffix Indicates Lead-Free Terminations
• Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.

Maker：Freescale
      

                                                                                         



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