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Description:
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Qty:20pcs

 

Specification:
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage 'Vds': 55 V
Maximum Gate-Source Voltage 'Vgs': 20 V
Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V
Maximum Drain Current 'Id': 110 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 146(max) nC
Rise Time (tr): 101 nS
Drain-Source Capacitance (Cd): 781 pF
Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

 

Package Included:
20pcs IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor

 

Note:
Please allow 0.5-1cm differences due to manual measurement.
Due to the light and screen difference, the item's color may be slightly different from the pictures.

Please pay attention to the length of the pins.

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On Jan 26, 2026 at 18:43:56 PST, seller added the following information: