Packaging: Tube
Series: -
Part Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
Vgs(th) (Max) @ Id: 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 18V
Vgs (Max): +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 800V
FET Feature: -
Power Dissipation (Max): 85W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3