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Technology leader in innovation

Samsung is a leading solution provider that designs and integrates critical components of the Solid State Drive in house.
Because Samsung has intimate knowledge of every component and is a leader in V-NAND technology innovation,
it can fine-tune each element and create perfect synergy.

Samsung enterprise SSD, PM863a V-nand, dram, controller, firmware

SPECIFICATIONS

Form Factor

2.5 inch

Capacity

480 GB, 960 GB, 1,920 GB, 3,840 GB

Sequential Read Speed

Max Up to 520 MB/sec

Sequential Write Speed

Max Up to 480 MB/sec

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MORE SPECS

Model Code (Capacity)1)

  • MZ-7LM480N (480 GB)

    •  

  • MZ-7LM960N (960 GB)

    •  

  • MZ-7LM1T9N (1,920 GB)

    •  

  • MZ-7LM3T8N (3,840 GB)

General Feature

  • APPLICATION

    Data Center

    •  

  • FORM FACTOR

    2.5 inch

    •  

  • INTERFACE

    SATA 6Gb/s
    (compatible with SATA 3Gb/s & SATA 1.5Gb/s)

    •  

  • DIMENSION (WxHxD)

    100.2 X 69.85 X 6.8 (mm)

    •  

  • WEIGHT

    Max 54.34g

    •  

  • STORAGE MEMORY

    Samsung V-NAND

    •  

  • CONTROLLER

    Samsung Mercury Controller

    •  

  • CACHE MEMORY

    512MB Low Power DDR3 (480 GB)
    1GB Low Power DDR3 (960 GB)
    2GB Low Power DDR3 (1,920 GB)
    4GB Low Power DDR3 (3,840 GB)

Special Feature

  • TRIM SUPPORT

    TRIM Supported

    •  

  • S.M.A.R.T SUPPORT

    S.M.A.R.T. Supported

    •  

  • GC (GARBAGE COLLECTION)

    Auto Garbage Collection Algorithm

    •  

  • ENCRYPTION SUPPORT

    AES 256-bit

    •  

  • WWN SUPPORT

    World Wide Name supported

Performance2)

  • SEQUENTIAL READ

    480 GB, 960 GB, 1,920 GB, 3,840 GB: Up to 520 MB/sec

    •  

  • SEQUENTIAL WRITE

    480 GB, 960 GB, 1,920 GB, 3,840 GB: Up to 480 MB/sec

    •  

  • RANDOM READ (4KB, QD32)

    480 GB, 960 GB, 1,920 GB, 3,840 GB: Up to 97,000 IOPS

    •  

  • RANDOM WRITE (4KB, QD32)

    480 GB: Up to 16,000 IOPS
    960 GB, 1,920 GB, 3,840 GB: Up to 24,000 IOPS

Power Consumption

  • ACTIVE WRITE3)

    480 GB, 960 GB: Typ. 3 W
    1,920 GB, 3,840 GB: Typ. 4 W

    •  

  • ACTIVE READ4)

    Typ. 3 W

    •  

  • IDLE5)

    1.3 W

Environment

  • ALLOWABLE VOLTAGE

    5V ± 5%

    •  

  • RELIABILITY (MTBF)

    2.0 Million Hours

    •  

  • OPERATING TEMPERATURE

    0 - 70 ℃

    •  

  • SHOCK

    1,500G, duration 0.5ms

Software

  • MANAGEMENT SW

    Samsung SSD DC Toolkit

  • 1)Actual usable capacity may be less. (due to formatting, partitioning, operating system, applications or otherwise)
  • 2)Performance may vary based on system hardware & configuration.
  • 3)Active Write power is measured on 128 KB sequential write.
  • 4)Active Read power is measured on 4 KB random read.
  • 5)Idle power is measured with DIPM off.